GFEVF1000‑Series aR Semiconductor DC Power Fuse 1000VDC 30‑800A

GFEVF1000‑Series aR Semiconductor DC Power Fuse 1000VDC 30‑800A is north‑american standard high‑speed aR‑class semiconductor DC power fuse, rated for 800‑1000VDC with max 50kA@1000VDC breaking capacity, time constant 2.5±0.5 ms. Features low arc‑voltage, low I²t let‑through energy, low watt losses, excellent shock and vibration resistance ≥20g. Multiple bolt‑on body diameters:26R /38R /51R. Supports parallel installation for higher ampacity within dimensional guidelines. Complies with UL‑248‑13, IEC 60269‑4, CE and RoHS. Widely used for energy‑storage systems, EV/HEV battery‑pack, DC relay backup, power converters and rectifier equipment.

GFEVF1000-semiconductor-fuse-30-800a-1000vdc

Key Features

• Model Series: GFEVF1000 North‑American Style aR Semiconductor DC Power Fuse
• Rated Voltage: 800‑1000 VDC
• Current Range: 30A‑800A, Operation Class: aR (semiconductor short‑circuit protection)
• Max Breaking Capacity: 50kA @1000VDC
• Time Constant: 2.5±0.5 ms
• Low arc‑voltage, low energy let‑through I²t characteristics
• Low watt losses, superior cycling capability
• Multi‑size bolt‑on body:26R / 38R / 51R for different current grades
• Parallel mounting permitted for higher ampacity within dimensional guidelines
• High mechanical shock & vibration resistance ≥20g
• Compliant: UL‑248‑13, IEC 60269‑4, CE, RoHS; REACH available upon request

General Technical Specifications

Part Number List & Electrical Parameters

Application Scenarios

GFEVF1000‑Series aR Semiconductor DC Power Fuse 1000VDC 30‑800A is built for high‑voltage DC new‑energy applications: energy‑storage battery‑pack, EV / HEV power systems, DC relay backup protection, power converters and rectifier equipment. The aR‑class high‑speed characteristic provides reliable short‑circuit protection for power semiconductor devices under heavy fault‑current conditions.

Installation & Operating Notes

• Bolt‑on mounting type; apply specified bolt torque value to avoid poor contact and over‑heating risk.
• Recommended continuous operating current ≤75% of fuse rated‑current; apply temperature‑derating factor for ambient temperature over 40℃.
• For closed‑box installation or altitude >2000 m, perform rated‑current derating according to datasheet requirements; closed‑box environment needs 2%‑5% derating per 1000 m altitude rise.
• Parallel mounting permitted only within dimensional and specification guidelines to achieve higher ampacity.
• Do NOT replace fuse under live DC load unless equipped with certified load‑break switchgear.
• Replace fuse immediately if mechanical damage, crack or deformation occurs on fuse body.
• Additional reliability validation test shall be conducted for extremely high‑vibration working environments.
• Correct copper conductor cross‑section shall be selected for terminals to control temperature‑rise.

Packing & Supply

Standard bulk package. Sample testing support, OEM customization, stable mass‑volume supply for energy‑storage, EV‑manufacturer and power‑converter manufacturers. REACH declaration available upon customer request.

Часто задаваемые вопросы

Q: What rating for GFEVF1000‑Series aR Semiconductor DC Power Fuse 1000VDC 30‑800A?
A: Rated 800‑1000VDC, current range 30‑800A, aR semiconductor‑protection class, max breaking capacity up to 50kA@1000VDC.

Q: What is aR‑class operation for this fuse?
A: aR class is semiconductor‑protecting high‑speed fuse class, designed for fast short‑circuit protection of power semiconductor devices.

Q: What body diameters are available?
A: Multiple bolt‑on body diameters:26R, 38R, 51R for different current grades.

Q: What standards does GFEVF1000‑Series comply with?
A: UL‑248‑13, IEC60269‑4, CE, RoHS compliant; REACH document available on request.

Q: Main application scenarios for GFEVF1000‑Series?
A: Energy‑storage battery‑pack, EV/HEV systems, DC relay backup, power converters and rectifier semiconductor short‑circuit protection.